EPITAXY DEVELOPMENT ENGINEER/SPECIALIST FOR GaN LEDs

Responsibilities
-          Epitaxial development of novel processes and structures for GaN material system in MOCVD (Metal-organic Chemical Vapor Deposition) processes
-          Planning and evaluation of experiments and measurements
-          In-depth analysis of processes for crucial parameters on material components and properties
-          Sustainable and systematic development in improving efficiency , stability and electrical characteristics of epitaxial wafers
Who we are looking for
-          University degree in chemistry, physics, materials science or a comparable natural science degree
-          Several years of experience in research and development of novel structures and new process regimes of III-V semiconductors, preferably doctorate in the field of epitaxy and deep understanding of MOCVD processes
-          Theoretical knowledge of optoelectronic semiconductor
-          Analytical strengths & ability to solve technical problems and issues
-          Extraordinary ability for innovation of semiconductor device